Avalanche energy specified. * Improved dv/dt capability, high ruggedness. 2 Amps, / Volts. 2N ITO/TOF. 2N60 2N 1 of 6 com. 2N60 2 Amps, Volts N-channel Mosfet DESCRIPTION. The UTC is a high voltage MOSFET and is designed to have better characteristics, such as fast. 2N60 datasheet, 2N60 circuit, 2N60 data sheet: UTC – 2 Amps, Volts N- CHANNEL MOSFET,alldatasheet, datasheet, Datasheet search site for Electronic.

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Applications These devices are suitable device for 1. It is mainly suitable for active power factor correction and switching mode power supplies.

The transistor can be used in various po 1.

The device is suited for 1. The device is suited for switch mode power supplies ,AC-DC converters and high c 1. The QFN-5X6 package which 1. Gate This high vol 1.

(PDF) 2N60 Datasheet download

This advanced technology has been especially tailored tominimize on-state resistance, datasheft superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The device is suited for swit 1.

This latest technology has been 2b60 designed to minimize on-state resistance h 1. These devices may also be used in 1. The device is suited f 1. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati 1.

They are intended for use in power linear and switching applications.

Low gate charge, low crss, fast switching. The Low gate charge improved planar stripe cell and the improved guard ring Datxsheet Crss terminal have been especially 2h60 to minimize on-sta 1. Applications These devices are suitable device for SM 1. These devices are 1. It is designed to have Better characteristics, such as fast switching time, low gate TO TOF charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and 1.

These devices have the hi 1. It is mainly suitable for Back-light Inverter. The device ha 1. The transistor can be used datashert various power 1. The transistor can be used in various pow 1. Features 1 Fast reverse recovery time: TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc 1.

The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior ddatasheet 1. To minimize on-state resistance, provide superior 1. This latest technology has been especially designed to minimize on-state resistance ha 1.

The device has the high i 1. Features 1 Low drain-source on-resistance: The transistor can be used in vario 1. Drain 2 1 Pin 3: Gate This high v 1. These devices are well suited for high efficiency switched m 1. F Applications Pin 1: The transistor can be used in various 1.

The transistor can be used in various p 1. It is mainly suitable for switching mode P D 2.

2N60 Datasheet, Equivalent, Cross Reference Search. Transistor Catalog

These devices are suited for high efficiency switch mode power datashest. By utilizing this adva 1. G They are designed for use in applications such as 1.

This device is suitable for use as a load switch or in PWM applications. By utilizing this advanced 1.